By Gerhard P. Willeke, Eicke R. Weber
Advances in Photovoltaics: Part Four offers invaluable info at the demanding situations confronted throughout the transformation of our strength provide approach to extra effective, renewable energies.
The quantity discusses the subject from a world point of view, providing the newest details on photovoltaics, a cornerstone technology.
It covers all features of this crucial semiconductor expertise, reflecting at the super and dynamic advances which were made in this subject in view that 1975, whilst the 1st booklet on sunlight cells-written through Harold J. Hovel of IBM-was released as quantity eleven within the now well-known sequence on Semiconductors and Semimetals.
Readers will achieve a behind the curtain examine the continual and swift medical improvement that results in the mandatory expense and value savings in worldwide business mass-production.
- Written by way of major, the world over recognized specialists on his topic
- Provides an in-depth evaluate of the present prestige and views of skinny movie PV technologies
- Discusses the demanding situations confronted throughout the transformation of our power offer method to extra effective, renewable energies
- Delves deep into photovoltaics, a cornerstone technolog
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Extra resources for Advances in Photovoltaics: Part 4
2015). This favors the simultaneous generation of a large number of nuclei. – Using of structured crucibles in order to provide a large number of nucleation centers. – Embedding of nucleation additives into the crucible coating of the bottom area. The idea of generating many electrically inactive grain boundaries (in particular Σ3) was already developed within the so-called dendritic growth technique, when a strong undercooling during the nucleation phase resulted in the formation of horizontal dendritic growth.
1981. Method for producing solar-cell-grade silicon. 1981. , 2012. Crystalline silicon feedstock preparation and analysis. R. ), Semiconductors and Semimetals, vol. 87. Elsevier Inc, pp. 185–261. , 2011. Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications. Phys. Status Solidi C 8 (3), 678–681. , 2010. Polykristalliner Siliciumstab fu¨r das Zonenschmelzverfahren und ein Verfahren zu dessen Herstellung.
Using of structured crucibles in order to provide a large number of nucleation centers. – Embedding of nucleation additives into the crucible coating of the bottom area. The idea of generating many electrically inactive grain boundaries (in particular Σ3) was already developed within the so-called dendritic growth technique, when a strong undercooling during the nucleation phase resulted in the formation of horizontal dendritic growth. When these dendrites started to grow vertically, they formed mainly Σ3-twin boundaries.
Advances in Photovoltaics: Part 4 by Gerhard P. Willeke, Eicke R. Weber